技術(shù)參數(shù)/極性： | P-CH | ? |
技術(shù)參數(shù)/漏源極電壓(Vds)： | 100 V | ? |
技術(shù)參數(shù)/連續(xù)漏極電流(Ids)： | 11.2A | ? |
技術(shù)參數(shù)/輸入電容(Ciss)： | 800pF @25V(Vds) | ? |
技術(shù)參數(shù)/工作溫度(Max)： | 150 ℃ | ? |
技術(shù)參數(shù)/工作溫度(Min)： | -55 ℃ | ? |
技術(shù)參數(shù)/耗散功率(Max)： | 75000 mW | ? |
封裝參數(shù)/引腳數(shù)： | 3 | ? |
封裝參數(shù)/封裝： | TO-257 | ? |
外形尺寸/封裝： | TO-257 | ? |
其他/產(chǎn)品生命周期： | Active | ? |
符合標(biāo)準(zhǔn)/RoHS標(biāo)準(zhǔn)： | Non-Compliant | ? |
| 型號(hào) | 品牌 | 相似度 | 封裝 | 簡介 | 數(shù)據(jù)手冊(cè) | |
|---|---|---|---|---|---|---|
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International Rectifier (國際整流器) | 完全替代 | Through Hole |
HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
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IRFY9130
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Infineon (英飛凌) | 完全替代 | TO-257 |
HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
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Semelab | 完全替代 | TO-220M |
HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
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